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CRYSTALLIZATION METHOD OF SEMICONDUCTOR THIN FILM, SUBSTRATE HAVING CRYSTALLIZED SEMICONDUCTOR THIN FILM, AND CRYSTALLIZATION DEVICE OF SEMICONDUCTOR THIN FILM
CRYSTALLIZATION METHOD OF SEMICONDUCTOR THIN FILM, SUBSTRATE HAVING CRYSTALLIZED SEMICONDUCTOR THIN FILM, AND CRYSTALLIZATION DEVICE OF SEMICONDUCTOR THIN FILM
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机译:半导体薄膜的结晶方法,具有结晶半导体薄膜的基板以及半导体薄膜的结晶装置
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摘要
PROBLEM TO BE SOLVED: To facilitate the exact arrangement of a recrystallization region (21) formed on an amorphous or polycrystalline semiconductor thin film (12), and to form an alignment mark (15) capable of being utilized in a process for manufacturing an electronic element, e.g. a thin film transistor (98), in the recrystallization region.;SOLUTION: The amorphous or polycrystalline semiconductor thin film (12) is formed on a substrate (11) having a surface composed of an insulating material, an alignment mark (15) is formed at a predetermined position of the amorphous or polycrystalline semiconductor thin film by irradiation with a first laser beam (19), and then a recrystallization region (21) having an enlarged particle size is formed at a predetermined position by irradiation with a second laser beam (20) by alignment based on the alignment mark.;COPYRIGHT: (C)2006,JPO&NCIPI
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