ETCHING LIQUID FOR CONTROLLING SURFACE PROFILE OF SILICON WAFER, AND PROCESS FOR PRODUCING SILICON WAFER USING THAT ETCHING LIQUID

摘要

PROBLEM TO BE SOLVED: To reduce the load on a double-sided simultaneous polishing step or a single-sided polishing step in a process for producing a silicon wafer, and to reduce the surface roughness of a wafer, while maintaining flatness, when planarization step is ended.;SOLUTION: The process for producing a silicon wafer comprises a step 13 for planarizing the front and rear sides of a disc-like silicon wafer obtained by slicing a silicon single crystal ingot by grinding or lapping; a step for etching the front and rear sides of the silicon wafer, by immersing it into etching liquid for controlling surface profile of the silicon wafer produced by admixing a fluorine-based surfactant uniformly to alkaline aqueous solution; a double-sided simultaneous polishing step 16 for simultaneously polishing the front and rear sides of the etched silicon wafer; and a single-sided polishing step for polishing the front and rear sides of the etched silicon wafer one by one, in this order.;COPYRIGHT: (C)2006,JPO&NCIPI