首页> 外国专利> GAS FLOW SENSOR DEVICE AND MANUFACTURING METHOD OF GAS FLOW SENSOR USED THEREFOR

GAS FLOW SENSOR DEVICE AND MANUFACTURING METHOD OF GAS FLOW SENSOR USED THEREFOR

机译:气体流量传感器装置及使用该气体流量传感器的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a gas flow sensor device having an easily-manufacturable gas flow sensor with a simple structure, capable of reducing power consumption, and heightening detection accuracy, and a manufacturing method of the gas flow sensor used therefor.;SOLUTION: This device is equipped with the gas flow sensor 10 having a heat insulating layer 12 interposed between a heater 13 formed on one surface side of a semiconductor substrate 11 which is a support substrate and the semiconductor substrate 11, a driving means for imparting an electric input to the heater 13 of the gas flow sensor 10, and a signal processing means for determining the flow rate of gas from a change of a resistance value of the heater 13 of the gas flow sensor 10 caused by a gas flow. Assuming that the thermal conductivity of the heat insulating layer 12 is αi and the heat capacity thereof is Ci, and that the thermal conductivity of the semiconductor substrate 11 is αs and the heat capacity thereof is Cs, the gas flow sensor 10 satisfies the relation: [αi×Ci][αs×Cs]. The driving means imparts intermittently the electric input to the heater 13.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种具有结构简单且易于制造,能够降低功耗并提高检测精度的气体传感器的气体传感器装置及其制造方法。 :该装置配备有气体流量传感器10,该气体流量传感器10具有形成在作为支撑衬底的半导体衬底11的一个表面侧上形成的加热器13和半导体衬底11之间的绝热层12,用于施加电的驱动装置。输入到气体流量传感器10的加热器13的信号处理装置,和用于根据由气体流量引起的气体流量传感器10的加热器13的电阻值的变化来确定气体流量的信号处理装置。假设隔热层12的热导率为αi,热容量为Ci,并且半导体基板11的热导率为αs,热容量为Cs,则气体流量传感器10满足以下关系:[αi&times; Ci] <[αs&times Cs]。驱动装置将电输入断续地施加到加热器13上。COPYRIGHT:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006090989A

    专利类型

  • 公开/公告日2006-04-06

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC WORKS LTD;

    申请/专利号JP20040280392

  • 发明设计人 WATABE YOSHIFUMI;HONDA YOSHIAKI;

    申请日2004-09-27

  • 分类号G01F1/692;B81B7/02;B81C1/00;

  • 国家 JP

  • 入库时间 2022-08-21 21:52:11

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