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Method of removing electrical continuity of the film structure between blocks are transferred, a method for manufacturing an active matrix substrate, a liquid crystal device and an active matrix substrate

机译:转移了去除块之间的膜结构的电连续性的方法,用于制造有源矩阵基板的方法,液晶装置和有源矩阵基板

摘要

PROBLEM TO BE SOLVED: To provide an entirely new method for effectively manufacturing a large active matrix substrate or liquid crystal display device having excellent characteristics by executing a new thin film structure transferring technology plural times. SOLUTION: In the case of transferring thin film structure blocks 1000 to 1800 to the surface of transfer bodies by using the thin film structure transferring method, a 1st thin film structure block group (1000, 1200, etc.) is transferred to the surface of a required transfer body at first, and then a 2nd thin film structure block group (1100, 1300, etc.) is transferred so as to be partially superposed to the 1st group and electric conduction between thin film structure blocks is secured on the superposed part. Consequently restriction to the size of a transferring substrate is removed and an active matrix substrate having optional size is manufactured.
机译:解决的问题:提供一种全新的方法,该方法通过多次执行新的薄膜结构转移技术来有效地制造具有优异特性的大型有源矩阵基板或液晶显示装置。解决方案:在通过薄膜结构转移方法将薄膜结构块1000到1800转移到转移体表面的情况下,第一个薄膜结构块组(1000、1200等)转移到薄膜表面。首先,将所需的转印体转印,然后将第二薄膜结构块组(1100、1300等)部分地重叠在第一组上,并在该重叠部分上确保薄膜结构块之间的导电性。因此,消除了对转移基板的尺寸的限制,并且制造了具有可选尺寸的有源矩阵基板。

著录项

  • 公开/公告号JP3837807B2

    专利类型

  • 公开/公告日2006-10-25

    原文格式PDF

  • 申请/专利权人 セイコーエプソン株式会社;

    申请/专利号JP19960353166

  • 发明设计人 下田 達也;井上 聡;

    申请日1996-12-16

  • 分类号G02F1/1368;G02F1/1343;G09F9/30;H01L21/336;H01L29/786;

  • 国家 JP

  • 入库时间 2022-08-21 21:51:54

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