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Putting the piezoelectric body thin film element and the ink jet type recording head which uses that and the piezoelectric body

机译:放置压电体薄膜元件和使用该压电体薄膜元件的喷墨型记录头以及压电体

摘要

PROBLEM TO BE SOLVED: To obtain a piezoelectric thin film element where the piezoelectric film is made thick and a large volume change is caused by providing the piezoelectric film where a stress caused in the piezoelectric film is relaxed and destruction due to a stress such as a crack is not caused when the thickness is increased. ;SOLUTION: The piezoelectric thin film element is configured by inserting a piezoelectric film 40 made of a piezoelectric material between an upper electrode 50 and a lower electrode 30. In this case, the piezoelectric film 40 has three transition layers in a direction of the film thickness, as a 1st transition layer 40b, a 2nd transition layer 40c, and a 3rd transition layer 40d from the layer close to the lower electrode sequentially, and a relation of d1d2d3 is satisfied, where d1 is a distance between the lower electrode 30 and the 1st transition layer 40b, d2 is a distance between the 1st transition layer 40b and the 2nd transition layer 40c and d3 is a distance between the 2nd transition layer 40c and the 3rd transition layer 40d.;COPYRIGHT: (C)1999,JPO
机译:要解决的问题:为了获得压电薄膜元件,其中压电薄膜被制成厚的并且通过提供压电薄膜来引起大的体积变化,该压电薄膜使压电薄膜中引起的应力被缓和并且由于诸如应力的应力而破坏。厚度增加时不会引起裂纹。 ;解决方案:压电薄膜元件是通过在上电极50和下电极30之间插入由压电材料制成的压电膜40构成的。在这种情况下,压电膜40在膜的方向上具有三个过渡层从第1过渡层40b,第2过渡层40c和第3过渡层40d开始依次从靠近下部电极的层起,形成d 1 2的关系。满足 3 ,其中d 1 是下电极30与第一过渡层40b之间的距离d 2 是第一过渡层40b与第二过渡层40c之间的距离,而d 3 是第二过渡层40c与第三过渡层40d之间的距离。COPYRIGHT:(C)1999,日本特许厅

著录项

  • 公开/公告号JP3837901B2

    专利类型

  • 公开/公告日2006-10-25

    原文格式PDF

  • 申请/专利权人 セイコーエプソン株式会社;

    申请/专利号JP19980083061

  • 发明设计人 邱 宏;角 浩二;守谷 壮一;

    申请日1998-03-30

  • 分类号H04R17/00;B06B1/06;B41J2/045;B41J2/055;H01L41/09;H01L41/24;

  • 国家 JP

  • 入库时间 2022-08-21 21:51:51

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