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CONTACT RESISTANCE MEASURING METHOD, CONTACT RESISTANCE MEASURING DEVICE AND SEMICONDUCTOR WAFER

机译:接触电阻测定方法,接触电阻测定装置及半导体晶片

摘要

PROBLEM TO BE SOLVED: To provide a technology for measuring a contact resistance between a pad for inputting/outputting a signal into/from a semiconductor integrated circuit and a probe, while acquiring information on the contact resistance between the pad for contact resistance measurement and the probe in contact therewith.;SOLUTION: This contact resistance measuring method has a step for bringing the first probe 21 into contact with the first pad 5 connected to the semiconductor integrated circuit 4, a step for bringing the second probe 22 into contact with the second pad 6 connected electrically to the first pad 5, a step for bringing the third probe 23 into contact with the third pad 7 connected electrically to the first pad 5, a step for measuring the first resistance R1 between the first probe 21 and the second probe 22, a step for measuring the second resistance R2 between the second probe 22 and the third probe 23, a step for measuring the third resistance R3 between the third probe 23 and the first probe 21, and a step for calculating the contact resistance r1 between the first probe 21 and the first pad 5 based on the first to third resistances R1-R3.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种技术,该技术用于测量用于向/从半导体集成电路输入/输出信号的焊盘与探针之间的接触电阻,同时获取有关用于接触电阻测量的焊盘与电极之间的接触电阻的信息。解决方案:该接触电阻测量方法具有使第一探针21与连接到半导体集成电路4的第一焊盘5接触的步骤,使第二探针22与第二探针22接触的步骤。电连接到第一焊盘5的焊盘6,使第三探针23与电连接到第一焊盘5的第三焊盘7接触的步骤,测量第一电阻R 1 之间的步骤。第一探针21和第二探针22,用于测量第二探针22和第三探针23之间的第二电阻R 2 的步骤,用于测量第三电阻的步骤。第三探针23与第一探针21之间的e R 3 ,以及基于该探针计算第一探针21与第一焊盘5之间的接触电阻r 1 的步骤第一至第三电阻R 1 -R 3 。;版权:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006038599A

    专利类型

  • 公开/公告日2006-02-09

    原文格式PDF

  • 申请/专利权人 NEC ELECTRONICS CORP;

    申请/专利号JP20040217890

  • 发明设计人 HASEGAWA TOMOKAZU;

    申请日2004-07-26

  • 分类号G01R27/02;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 21:51:31

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