193nm resist having properties after exposure to an improved

摘要

The use of the resist composition containing the image-forming polymer component comprising an acid-sensitive polymer having a monomer unit having an acid labile moiety containing pendant groups distal to using radiation and possibly other 193nm radiation, and / or It is imageable Te, resist structure of etch resistance is improved and, can be developed to form a resist structure for developing improved properties can be achieved, acid catalyzed positive resist composition is obtained were.