The said quantum well formation which is laminated on both sides of quantum well formation and this

摘要

PPROBLEM TO BE SOLVED: To provide a semiconductor multilayer structure capable of inter-band optical transition between a single level and a plurality of levels and controlling an energy interval between the levels and a vibrator intensity between the levels. PSOLUTION: The semiconductor multilayer structure is formed with: a quantum well layer 2 formed by stacking at least two or more of semiconductor layers 4, 5 whose band gap energy differs from each other; and semiconductor barrier layers 3, 3 stacked at both sides of the quantum well layer 2 to control a band gap energy difference between the semiconductor layers 4, 5 of the quantum well layer 2. Further, by controlling the layer thickness of the semiconductor layer wherein the band gap energy of the quantum well layer is least, the first level of a valence electron band of the semiconductor layer is localized in the quantum well of this semiconductor and the first level of the conduction band of this semiconductor is excluded from in the quantum well of this semiconductor so as to differentiate spatial shapes of wave functions of the levels resulting in decreasing the vibrator intensity. PCOPYRIGHT: (C)2004,JPO