Nitriding gallium light-emitting diode and its production mannered null sapphire substrate

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride light emitting diode for flip-chip bonding that secures sufficient area for bonding while optimizing the electrode array of a light emitting diode, and improves luminance and reliability, and also to provide its manufacturing method.;SOLUTION: The light emitting diode 40 has an n-side electrode and a p-side electrode formed in a line shape with the smallest line width and arranged in parallel at a mutual equal interval to obtain uniform current diffusion effect without sacrificing light emission area, a reflecting film and an electrode for bonding are vapor-deposited on a passivation layer of a nonconductor to increase the light emission efficiency of the LED, and sufficient bonding area is secured to increase a property of heat radiation through an Si substrate 61.;COPYRIGHT: (C)2005,JPO&NCIPI