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Diode with reduced forward-bias resistance and shunt capacitance
Diode with reduced forward-bias resistance and shunt capacitance
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机译:具有降低的正向偏置电阻和并联电容的二极管
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摘要
A diode having reduced forward-bias resistance and shunt capacitance. The diode includes a lightly doped region of a semiconductor substrate, a carrier injection region and an ohmic contact region. The carrier injection region is disposed within the lightly doped region and has a plurality of sides of substantially uniform length. The ohmic contact region is disposed about a perimeter of the carrier injection region.
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