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Gate-controlled electron-emitter array panel, active matrix display including the same, and method of manufacturing the panel
Gate-controlled electron-emitter array panel, active matrix display including the same, and method of manufacturing the panel
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机译:栅极控制的电子发射器阵列面板,包括该面板的有源矩阵显示器及其制造方法
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摘要
An active matrix display comprising an array of gate-controlled surface-conduction electron-emitter devices (GC_SEDs). Each gate-controlled_surface-conduction electron-emitter device (GC_SED) comprises a first electrode, and a pair of (second and third) electrodes that are insulated from the first electrode and that are spaced apart from each other to bound an electron-emitting area overlapping the first electrode. The potential barrier in the electron-emitting area (slit) between the second and third electrodes is modulated (controlled, switched) by applying a voltage to the first electrode that serves as a gate that effectively controls the tunneling of the electrons, between the second and third electrodes. Efficient electron tunneling is allowed through modulation of potential barrier by the first electrode functioning as a gate even though the distance (width of the electron-emitting area, slit) between the second and third electrodes may be significantly more than 10 nanometers.
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