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Ta based bilayer seed for IrMn CPP spin valve
Ta based bilayer seed for IrMn CPP spin valve
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机译:用于IrMn CPP旋转阀的Ta基双层种子
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摘要
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
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