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Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer
Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer
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机译:通过使用化学有序增强层形成的具有反铁磁交换耦合结构的磁阻传感器
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摘要
An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an enhancement layer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromagnetic layer in contact with the enhancement layer, and a ferromagnetic layer exchange-coupled with the antiferromagnetic layer. The enhancement layer is an alloy selected from the group consisting of alloys of AuCu, FePt, FePd, AgTi3, Pt Zn, PdZn, IrV, CoPt and PdCd, and the antiferromagnetic layer is an alloy of Mn with Pt, Ni, Ir, Pd or Rh. The enhancement layer enhances the transformation of the Mn alloy from the chemically-disordered phase to the chemically-ordered phase.
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