Semiconductor device and method of manufacturing the device based on evaluation data of test transistors uniformly arranged on test wafer

摘要

This patent specification describes a method of manufacturing semiconductor device which includes providing a test wafer having a plurality of test transistors formed on a substrate and uniformly arranged in a substantially whole area of the test wafer, measuring characteristic of the test transistors and implanting onto a manufacturing wafer with adjusted dosage of the implantation at each position of the wafer based on the measured result of the distribution of the characteristic of the test transistors such that each transistor has an equal characteristic.