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Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer
Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer
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机译:包含四元Heusler合金Co2Mn(Ge1-xSnx)的磁感应元件,构成自由磁层或固定磁层
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摘要
A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2≦x≦0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.
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机译:描述了一种磁感测元件,其包括多层膜,该多层膜包括被钉扎的磁性层,设置在被钉扎的磁性层上的自由磁性层以及在它们之间的非磁性层,其中电流垂直于多层膜的各个层的表面流动。非磁性层由Cu组成并且具有面心立方晶格晶体结构,其中{111}面优选在平行于该层的表面的方向上取向。固定磁性层和自由磁性层中的至少一个包括Co 2 Sub> Mn(Ge 1-x Sub> Sn x Sub>)合金层,下标x满足0.2≤x≤0.8的范围; Co 2 Sub> Mn(Ge 1-x Sub> Sn x Sub>)合金层具有体心立方晶格晶体结构,其中{110 }平面优选在平行于层表面的方向上定向。
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