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Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
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机译:反应溅射工艺可优化硫属元素化物薄层的热稳定性
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摘要
A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from the group consisting of S, Se and Te, and m has a value of between 0 and 1. The chalcogenide layer further includes an oxygen or nitrogen content in the range from 0.001 atomic % to 75 atomic %.
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机译:硫属化物层包括具有分子式M m Sub> X 1-m Sub>的化合物的组成,其中M表示一种或多种选自下组的元素:IVb族元素周期系统,周期系统的Vb族元素和过渡金属,X表示一种或多种选自S,Se和Te的元素,m的值介于0和1之间。硫族化物层还包含氧或氮含量在0.001原子%至75原子%的范围内。
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