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Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry
Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry
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机译:基于光学干涉术的覆盖,对准标记和临界尺寸测量的设备和方法
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摘要
Methods and apparatus based on optical homodyne displacement interferometry, optical coherent-domain reflectometry (OCDR), and optical interferometric imaging are disclosed for overlay, alignment mark, and critical dimension (CD) metrologies that are applicable to microlithography applications and integrated circuit (IC) and mask fabrication and to the detection and location of defects in/on unpatterned and patterned wafers and masks. The metrologies may also be used in advanced process control (APC), in determination of wafer induced shifts (WIS), and in the determination of optical proximity corrections (OPC).
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