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Method for producing doped, alloyed, and mixed-phase magnesium boride films

机译:掺杂,合金化和混合相的硼化镁薄膜的生产方法

摘要

Conducting and superconducting doped, magnesium boride materials are formed by a process which combines physical vapor deposition with chemical vapor deposition by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor and a dopant into the chamber which combines with the magnesium vapor to form the material. Embodiments include forming carbon-doped magnesium diboride film and powder with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, with a hydrogen carrier gas together with a borane precursor in a chamber having a source of magnesium vapor.
机译:导电和超导掺杂的硼化镁材料是通过以下方法形成的:将物理气相沉积与化学气相沉积相结合,方法是在沉积室内物理产生镁蒸气,然后将含硼前驱物和掺杂剂引入到与镁蒸气结合的腔室内。形成材料。实施方案包括通过在腔室中添加含碳的金属有机镁前体双(甲基环戊二烯基)镁,氢载气和硼烷前体,通过混合物理化学气相沉积(HPCVD)形成碳掺杂的二硼化镁膜和粉末。有镁蒸气源。

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