首页>
外国专利>
Planar dual-gate transistor and method for fabricating a planar dual-gate transistor
Planar dual-gate transistor and method for fabricating a planar dual-gate transistor
展开▼
机译:平面双栅极晶体管及制造平面双栅极晶体管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating a double-gate transistor including defining an active area on an SOI substrate, forming a first gate region on the SOI substrate, forming source/drain regions made of silicon-germanium in the active area, forming a channel region from the silicon layer of the SOI substrate, forming a layer having a planar surface above the SOI substrate, the source/drain regions, and the first gate region, bonding a second wafer to the planar surface, and forming a second gate region opposite the first gate region.
展开▼