首页> 外国专利> Limited output address register technique providing selectively variable write latency in DDR2 (double data rate two) integrated circuit memory devices

Limited output address register technique providing selectively variable write latency in DDR2 (double data rate two) integrated circuit memory devices

机译:有限的输出地址寄存器技术可在DDR2(双倍数据速率两个)集成电路存储设备中提供选择性可变的写等待时间

摘要

A limited output address register technique for selectively variable write latency in double data rate 2 (DDR2) integrated circuit memory devices providing a reduced number of paths directly connected to the output. A chain of DQ flip-flops is disclosed which is only loaded on valid write address commands but shifts continually thereafter every clock cycle. Since new READ or WRITE commands cannot be issued on successive cycles, at any given point in the chain an address (or state) is valid for at least two cycles. Therefore, a selected point in the register chain can be used to satisfy the requirements for two different latencies. For DDR2, having N write latency cases, only ceil(N/2) access points to the write address output have to be provided thereby saving on-chip area and increasing speed. In a specific embodiment disclosed, DDR1 may also be supported.
机译:一种有限的输出地址寄存器技术,用于选择性地改变双倍数据速率2(DDR2)集成电路存储设备中的写入等待时间,从而减少了直接连接到输出的路径数量。公开了一种DQ触发器链,该DQ触发器仅加载在有效的写地址命令上,但是此后在每个时钟周期连续移位。由于不能在连续的周期内发出新的READ或WRITE命令,因此在链中的任何给定点,地址(或状态)至少在两个周期内有效。因此,寄存器链中的选定点可用于满足两个不同延迟的要求。对于具有N个写延迟情况的DDR2,只需提供对写地址输出的ceil(N / 2)访问点,从而节省了片上面积并提高了速度。在公开的特定实施例中,也可以支持DDR1。

著录项

  • 公开/公告号US7061823B2

    专利类型

  • 公开/公告日2006-06-13

    原文格式PDF

  • 申请/专利权人 JON ALLAN FAUE;STEVE S. EATON;

    申请/专利号US20040924546

  • 发明设计人 JON ALLAN FAUE;STEVE S. EATON;

    申请日2004-08-24

  • 分类号G11C8/00;

  • 国家 US

  • 入库时间 2022-08-21 21:43:45

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