首页>
外国专利>
Heterogeneous composite semiconductor structures for enhanced oxide and air aperture formation for semiconductor lasers and detectors and method of manufacture
Heterogeneous composite semiconductor structures for enhanced oxide and air aperture formation for semiconductor lasers and detectors and method of manufacture
展开▼
机译:用于增强半导体激光器和检测器的氧化物和气孔形成的异质复合半导体结构及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention creates oxide and air apertures in material systems, such as InP, that do not usually accommodate epitaxial incorporation of highly oxidizing materials, such as AlAs, of sufficient thickness to adequately provide optical as well as current aperturing. A composite structure of relatively slowly oxidizing layer or layers (e.g. AlInAs on InP) with a faster-oxidizing layer or layers (e.g. AlAs on InP) can be used to produce oxide and air apertures of various shapes and sizes, and to also increase the oxidation rate.
展开▼