首页>
外国专利>
Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)
Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)
展开▼
机译:使用浅沟槽隔离(STI)在CMOS技术中设计逆窄宽度效应(INWE)的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method (200) of forming an isolation structure is disclosed, and includes forming an isolation trench in a semiconductor body (214) associated with an isolation region, and filling a bottom portion of the isolation trench with an implant masking material (216). An angled ion implant is performed into the isolation trench (218) after having the bottom portion thereof filled with the implant masking material, thereby forming a threshold voltage compensation region in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material (220).
展开▼