A method (200) of forming an isolation structure is disclosed, and includes forming an isolation trench in a semiconductor body (214) associated with an isolation region, and filling a bottom portion of the isolation trench with an implant masking material (216). An angled ion implant is performed into the isolation trench (218) after having the bottom portion thereof filled with the implant masking material, thereby forming a threshold voltage compensation region in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material (220).
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