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Incorporating dopants to enhance the dielectric properties of metal silicates
Incorporating dopants to enhance the dielectric properties of metal silicates
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机译:掺入掺杂剂以增强金属硅酸盐的介电性能
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摘要
The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.
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