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Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
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机译:气体化学循环,通过HDP-CVD实现高纵横比的间隙填充
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摘要
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.
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