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Short-channel Schottky-barrier MOSFET device and manufacturing method
Short-channel Schottky-barrier MOSFET device and manufacturing method
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机译:短沟道肖特基势垒MOSFET器件及其制造方法
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摘要
A MOSFET device and method of fabricating are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the present invention unconditionally eliminates the parasitic bipolar gain associated with MOSFET fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art.
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