首页> 外国专利> Direct conversion receiver using vertical bipolar junction transistor available in deep n-well CMOS technology

Direct conversion receiver using vertical bipolar junction transistor available in deep n-well CMOS technology

机译:使用深n阱CMOS技术的垂直双极结型晶体管的直接转换接收器

摘要

This invention is about the direct conversion receiver. It is excellent the receiving sensitivity that DC off-set, matching characteristics of the relationship of I/Q circuits and noise characteristics are improved. In order to achieve this purpose, the direct conversion receiver uses vertical bipolar junction transistor available in standard triple-well CMOS technology in the switching element of mixer and base-band analog circuits. Furthermore, as using the passive mixer in the other practical example of this invention, this invention controls the occurrence of l/f noise. As using the vertical bipolar junction transistor available in standard triple-well CMOS in the base-band analog circuits, this invention realizes the direct conversion receiver that DC off-set, matching characteristics of the relationship of I/Q circuit and noise characteristics are improved.
机译:本发明涉及直接转换接收机。直流偏移,I / Q电路关系的匹配特性和噪声特性均得到改善,具有出色的接收灵敏度。为了实现此目的,直接转换接收器在混频器和基带模拟电路的开关元件中使用标准三阱CMOS技术中可用的垂直双极结型晶体管。此外,由于在本发明的另一实施例中使用无源混频器,所以本发明控制了1 / f噪声的发生。通过在基带模拟电路中使用标准三阱CMOS中可用的垂直双极结型晶体管,本发明实现了直流偏移,I / Q电路和噪声特性的匹配特性得到改善的直接转换接收器。 。

著录项

  • 公开/公告号US7088168B2

    专利类型

  • 公开/公告日2006-08-08

    原文格式PDF

  • 申请/专利权人 KWYRO LEE;ILKU NAM;

    申请/专利号US20040504366

  • 发明设计人 KWYRO LEE;ILKU NAM;

    申请日2003-07-11

  • 分类号G06G7/12;

  • 国家 US

  • 入库时间 2022-08-21 21:41:56

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