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Methods of fabricating flash memory devices having self aligned shallow trench isolation structures
Methods of fabricating flash memory devices having self aligned shallow trench isolation structures
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机译:具有自对准浅沟槽隔离结构的闪存器件的制造方法
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摘要
Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the stack gate structure adjacent a trench sidewall of the trench isolation region may include a first nitrogen doped layer.
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