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System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control

机译:具有多压力区负载的CMP的系统和方法,用于改善边缘和环形区的材料去除控制

摘要

In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface. A carrier or subcarrier for a CMP apparatus that includes: a plate having an outer surface; a first pressure chamber for exerting a force to urge the plate in a predetermined direction; a spacer coupled to a peripheral outer edge of the plate; a membrane coupled to the plate via the spacer and separated from the plate by a thickness of the spacer; and a second pressure chamber defined between the membrane and the plate surface for exerting a second force to urge the membrane in a third predetermined direction. Substrate, such as a semiconductor wafer, processed or fabricated according to the invention.
机译:一方面,本发明提供了一种用于平坦化圆盘型半导体晶片或其他基板的方法。该方法包括以下步骤:在第一压力下将围绕晶片的保持环压在抛光垫上。用第二压力将晶片的第一外围边缘部分压在抛光垫上。用第三压力将晶片内部的第二部分压向抛光垫的周边边缘部分。可以通过与外围边缘部分接触的机械构件来提供第二压力。第二压力可以是对着晶片的背面的气压。理想地,通过弹性膜施加气压,或者通过直接压在晶片背面的至少一部分上的气体直接施加气压。用于CMP设备的载体或副载体,包括:具有外表面的板;第一压力室,其施加力以沿预定方向推动板;间隔件,其联接到所述板的外围外边缘;膜片,其通过垫片与板连接,并与板隔开垫片的厚度。第二压力室,其限定在膜片和板表面之间,用于施加第二力以沿第三预定方向推动膜片。根据本发明处理或制造的衬底,例如半导体晶片。

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