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AMR Sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction

机译:具有软相邻层的AMR传感器,具有高磁化强度,高电阻率,低固有各向异性和接近零的磁致伸缩

摘要

A high magnetization, high resistivity, low corrosion and near zero magnetostriction soft adjacent layer (SAL) is provided for a magnetoresistive (MR) sensor of a read head. The MR sensor may either be an anisotropic MR (AMR) sensor or a spin valve sensor. In both sensors the SAL is CoHfNb or CoHfNbFe. The Hf is added to reduce corrosion and the Hf and Nb are balanced to provide near zero magnetostriction. The addition of Fe is an enhancer for reducing negative magnetostriction without diluting the magnetism of the alloy. Since CoHfNb has significantly higher magnetization than NiFeCr the SAL layer of CoHfNb can be thinner than the SAL of NiFeCr which results in a significantly higher resistance SAL. The higher resistance SAL equates to less shunting of the sense current through the SAL and better signal performance of the MR read head.
机译:为读头的磁阻(MR)传感器提供了高磁化,高电阻率,低腐蚀和接近零的磁致伸缩软相邻层(SAL)。 MR传感器可以是各向异性MR(AMR)传感器或自旋阀传感器。在两个传感器中,SAL为CoHfNb或CoHfNbFe。添加Hf以减少腐蚀,并且平衡Hf和Nb以提供接近零的磁致伸缩。 Fe的添加是用于减少负磁致伸缩而不稀释合金的磁性的增强剂。由于CoHfNb的磁化强度明显高于NiFeCr,因此CoHfNb的SAL层可以比NiFeCr的SAL薄,从而导致电阻SAL明显更高。较高的电阻SAL等于通过SAL的感测电流分流较少,并且MR读取头的信号性能更好。

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