首页> 外国专利> MAGNETORESISTIVE SENSOR WTIH A SOFT ADJACENT LAYER HAVING HIGH MAGNETIZATION, HIGH RESISTIVITY, LOW INTRINSIC ANISOTROPY AND NEAR ZERO MAGNETOSTRICTION

MAGNETORESISTIVE SENSOR WTIH A SOFT ADJACENT LAYER HAVING HIGH MAGNETIZATION, HIGH RESISTIVITY, LOW INTRINSIC ANISOTROPY AND NEAR ZERO MAGNETOSTRICTION

机译:具有软磁相邻层的磁阻传感器具有高磁化率,高电阻率,低内在各向异性和零磁化附近

摘要

A soft adjacent layer with high magnetization, high resistivity, low corrosion and near zero magnetic strain is provided for the magnetoresistive sensor of the read head. The magnetoresistive sensor may be either an anisotropic magnetoresistive sensor or a spin valve sensor. In both sensors, the soft adjacent layer is CoHfNb or CoHfNbFe. Hf is added to reduce corrosion, and Hf and Nb are balanced to provide near zero magnetization. The addition of Fe can increase the reduction of negative magnetostriction without weakening the magnetization of the alloy. Since CoHfNb has much higher magnetization than NiFeCr, soft adjacent layers made of CoHfNb can be made thinner than soft adjacent layers made of NiFeCr, resulting in higher resistance of the soft adjacent layers. The higher the resistance of the soft adjacent layer, the smaller the shunting of the sense current through the soft adjacent layer, and the better the signal performance of the magnetoresistive readhead.
机译:为读取头的磁阻传感器提供了一个具有高磁化强度,高电阻率,低腐蚀和接近零磁应变的软相邻层。磁阻传感器可以是各向异性磁阻传感器或自旋阀传感器。在两个传感器中,软相邻层是CoHfNb或CoHfNbFe。添加Hf以减少腐蚀,并且平衡Hf和Nb以提供接近零的磁化强度。 Fe的添加可以在不削弱合金的磁化强度的情况下增加负磁致伸缩的减小。由于CoHfNb具有比NiFeCr高得多的磁化强度,所以可以使由CoHfNb制成的软相邻层比由NiFeCr制成的软相邻层更薄,从而导致软相邻层的电阻更高。软相邻层的电阻越高,通过软相邻层的感应电流的分流越小,并且磁阻读取头的信号性能越好。

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