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A METHOD FOR PREPARING MONOCRYSTALS OF AGGAGES4

机译:制备单体的方法4

摘要

A method for preparing monocrystals of AgGaGeS4, in which method preliminary performed are: batch synthesis of 2-3 g of alloys of a stochiometric composition of AgGaGeS4 during 10-15 minutes, rotation of ampoules with alloys during 45-50 hours at 1220-1270 K and cooling thereof to the room temperature at the rate of 40-50 K/hour for the forced homogenization of alloys, grinding thereof to the powdered state, overloading the charge to the growth ampoule, obtaining homogeneous fusion from them at 1220-1270 K, crystallization of 4-5 mm of fusion and ageing thereof for 90-110 hours for obtaining crystal seed, fusing 2-3 mm of seed, building up monocrystal on the seed.
机译:一种制备AgGaGeS4单晶的方法,其中初步进行的方法是:在10-15分钟内分批合成2-3 g AgGaGeS4的化学计量组成的合金,在1220-1270的45-50小时内旋转安瓿与合金K并以40-50 K /小时的速度将其冷却至室温,以进行合金的强制均质化,将其研磨成粉末状,使生长安瓿中的电荷超载,并在1220-1270 K时从中获得均匀的熔化然后,将4-5mm的融合物结晶,并老化90-110小时以获得晶种,将2-3mm的晶种融合,在晶种上形成单晶。

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