FOCUS TEST MASK, FOCUS MEASUREMENT METHOD AND EXPOSURE APPARATUS

摘要

A test pattern projected on a wafer (W) through a projection optical system (PL)is provided on a focus test pattern. The focus test pattern has line patterns (12a-12f)arranged side by side in the measurement direction, a phase shift portion (13)disposed in a region near each of the line patterns and shifting the phase of passinglight, and standard patterns (11a-11d) for obtaining images as a standard usedin measurement of line pattern image misalignment. Intervals of the line patternsare set such that each line pattern can be considered equivalent to an isolatedline.