USE OF PHOSLON (PNO) FOR BORDERLESS CONTACT FABRICATION, ETCH STOP/BARRIER LAYER FOR DUAL DAMASCENE FABRICATION AND METHOD OF FORMING PHOSLON

摘要

A method of forming phoslon (PNO) comprising the following steps. A CVD reaction chamber having a reaction temperature of from about 300 to 600° C. is provided. From about 10 to 200 sccm PH₃ gas, from about 50 to 4000 sccm N₂ gas and from about 50 to 1000 sccm NH₃ gas are introduced into the CVD reaction chamber. Either from about 10 to 200 sccm O₂ gas or from about 50 to 1000 sccm N₂O gas is introduced into the CVD reaction chamber. An HFRF power of from about 0 watts to 4 kilowatts is also employed. An LFRF power of from about 0 to 5000 watts may also be employed. Employing a phoslon etch stop layer in a borderless contact fabrication. Employing a phoslon lower etch stop layer and/or a phoslon middle etch stop layer in a dual damascene fabrication.