HIGH-PERFORMANCE VAPORIZER FOR LIQUID-PRECURSOR AND MULTI-LIQUID-PRECURSOR VAPORIZATION IN SEMICONDUCTOR THIN FILM DEPOSITION

摘要

A vaporization system (50, 92, 92a, 92b, 180) for thin film formation and for introducing vapors into a deposition chamber (26, 84, 130) for depositing films onto a semi-conductor surface has a vaporization chamber (52, 116, 192) that is selectively provided with at least two different, that is selectively provided with at least two different, separate, precursor liquids (54A, 54B, 54C, 110A, 110B, 186) carried in a gas stream that may be a single carrier gas, or a selected one of a plurality of carrier gases from gas sources (12, 62A, 62B, 62C, 98A, 98B, 184). When the liquids being introduced are likely to be subject to thermal decomposition from contact with high temperature surfaces, an atomizer (94, 142A, 142B, 154A, 154B, 182) is used at the inlet of the vaporization chamber (52, 116, 192) to provide an aerosol to the vaporization chamber (52, 116, 192) from one or more individual carrier gases from gas sources 12, 62A, 62B, 62C, 98A, 98B for simultaneous or sequential introduction into the vaporization chamber (52, 116, 192). The vaporization chamber (52, 116, 192) may be designed to insure complete vaporization by incorporating a recirculating gas flow through heated passageways (198, 124, 202, 212) before the vaporized gas/vapor mixture exits the vaporization chamber (52, 116, 192).