A three-terminal semiconductor transistor device comprises a base region (833) formed by a semiconductor material of a first conductivity type at a first concentration, the base region being in contact with a first electrical terminal (845) via a semiconductor material (835) of the second conductivity type at a second concentration, wherein the second concentration is lower than the first concentration. The three-terminal semiconductor transistor device also includes a conductive emitter region (851) in contact with the semiconductor base region (833), forming a first Schottky barrier junction at the interface of the conductive emitter region (851) and the semiconductor base region (833). The conductive emitter region (851) is in contact with a second electrical terminal (841). The three-terminal semiconductor transistor device further includes a conductive collector region (852) in contact with the semiconductor base region (833), which forms a second Schottky barrier junction at the interface of the conductive collector region (852) and the semiconductor base region (833). The conductive collector region (852) is in contact with a third electrical terminal (842). The tunneling current through the first Schottky barrier junction or the second Schottky barrier junction is substantially controlled by the voltage of the semiconductor base region (833).
展开▼
