首页>
外国专利>
PROCESS FOR FORMING A SiON/SiO2 INTERLEVEL DIELECTRIC WITH AFTER-TREATMENT OF THE CVD SILICIUM OXYNITRIDE LAYER
PROCESS FOR FORMING A SiON/SiO2 INTERLEVEL DIELECTRIC WITH AFTER-TREATMENT OF THE CVD SILICIUM OXYNITRIDE LAYER
展开▼
机译:CVD氧化硅氮化层处理后形成SiON / SiO2介电层的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
An interlevel dielectric including a tetraethyl orthosilicate (TEOS) oxide and a silicon oxynitride (SiON) etch stop layer is formed for use in integrated circuit fabrication. A SiON layer is deposited onto a semiconductor substrate which may include transistors and/or interconnect levels. The SiON layer is heated before deposition of the TEOS layer. Heating of the SiON layer greatly reduces the number of defects formed during the TEOS deposition. A highly conformal, high-quality interlevel dielectric is thereby formed.
展开▼