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MEMORY WITH SELECTABLE SINGLE CELL OR TWIN CELL CONFIGURATION AND METHOD OF OPERATING A MEMORY
MEMORY WITH SELECTABLE SINGLE CELL OR TWIN CELL CONFIGURATION AND METHOD OF OPERATING A MEMORY
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机译:具有可选单细胞或双胞胎构型的记忆体和操作记忆体的方法
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摘要
A memory circuit (10) comprises a memory including a memory array (32), a twin cell mode predecoder (100), and a row address predecoder (207). The memory array comprises word lines (34). The twin cell mode predecoder is configured for selecting one of four word line (118, 124, 130, 136) activation configurations for the memory array. The four word line activation configurations include three twin cell word line activation configurations and a single cell word line activation configuration. The row address predecoder is configured for selecting one of four word lines (280, 282, 284, 286) if the single cell word line activation configuration is selected.
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