SINGLE-ELECTRON TRANSISTOR, FIELD-EFFECT TRANSISTOR, SENSOR, METHOD FOR PRODUCING SENSOR, AND SENSING METHOD

摘要

A single-electron transistor comprising at least a substrate (1), a source electrode (3) and a drain electrode (4) formed on top of the substrate (1) opposing to each other, and a channel arranged between the source electrode (3) and the drain electrode (4) is disclosed wherein the channel is composed of ultra fine fibers (CNT) (7). By having such a constitution, a sensor can have excellent sensitivity.