THRESHOLD VOLTAGE NUMERICAL ANALYSIS METHOD FOR SONOS ERASE IN SEMICONDUCTOR

摘要

PURPOSE: A method for analyzing threshold voltage with a numerical analysis method during a sonos eras process in semiconductor is provided to drastically reduce the period for developing the silicon oxide nitride oxide silicon(SONOS) device, thereby drastically reducing the cost thereof. CONSTITUTION: A method for analyzing threshold voltage with a numerical analysis method during a sonos eras process in semiconductor includes the steps of: calculating the electric field in the tunnel oxide in the time tn by using a first mathematical formula; calculating the amount of change of the program threshold voltage in the silicon oxide nitride oxide silicon(SONOS) device in the time tn by using the electric field in the tunnel oxide layer; and analyzing the threshold voltage numerical value during the SONOS erase process.