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Piezoelectric thin film and method for preparation thereof, and piezoelectric element having the piezoelectric thin film, ink-jet head using the piezoelectric element, and ink-jet recording device having the ink-jet head
Piezoelectric thin film and method for preparation thereof, and piezoelectric element having the piezoelectric thin film, ink-jet head using the piezoelectric element, and ink-jet recording device having the ink-jet head
A piezoelectric thin film that can obtain a large piezoelectric displacement. The chemical composition of the piezoelectric thin film is represented by Pb 1 + a (Zr x Ti 1-x) O 3 + a ( single, 0.2 ≤a ≤0.6, 0.50 ≤x ≤0.62 ). The crystal structure of the piezoelectric thin film is a member sweep oxygen ions, titanium ions, with an ion defect lacks a part of the zirconium ion perovskite-type columnar crystal region 24 and a non-ionic defect perovskite-type columnar crystal It comprises a mixture of an area (25). According to the configuration of the piezoelectric thin film, since by that the ion deficient perovskite-type columnar crystal region 24 can be relieve residual compressive stress in the crystal, it is possible to obtain a piezoelectric displacement (amount of displacement) of a large piezoelectric element it becomes.
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机译:可获得大压电位移的压电薄膜。压电薄膜的化学组成由 Pb 1 + a(Zr x Ti Sub> Sub> 1-x)O 3 + a(single,0.2≤a≤0.6, 0.50≤x≤0.62)。压电体薄膜的晶体结构是一部分氧离子,钛离子,具有离子缺陷的成员,其中一部分缺乏锆离子钙钛矿型柱状晶体区域24和非离子缺陷钙钛矿型柱状晶体区域。区域(25)的混合。根据压电体薄膜的结构,由于离子不足的钙钛矿型柱状晶体区域24能够缓和晶体中的残留压缩应力,因此能够得到大的压电体的压电体位移(位移量)。成为它的元素。
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