METHOD FOR DEPOSITION OF TUNGSTEN-SILICIDE AND METHOD FOR FABRICATING OF TUNGSTEN-POLYCIDE GATE ELECTRODE BY USING THE SAME

摘要

The present invention is the deposition of tungsten silicide is capable of removing fluorine remaining in the inner chamber after the deposition of tungsten silicide Using that method, and to provide a method for producing a tungsten polycide gate electrode him, the invention is a once deposited and once the cleaning chamber after the deposition process inside the chamber at the time of deposition of tungsten silicide as a single-wafer chamber system default When the chamber cleaning process to reduce the concentration of fluorine remaining NF ₃ By using a gas cleaning process and SiH _{Purge with 4} for the gas to have a degree, to the inner chamber minimizing the concentration of fluorine remaining, whereby there is an effect that it is possible to improve the electrical properties of the gate oxide to reduce the penetration amount of fluorine penetration in the internal tungsten silicide deposited upon subsequent iterations.