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METHOD FOR PREVENTING DIVOT PATTERN DURING THE SHALLOW TRENCH ISOLATION PROCESS

机译:浅沟槽隔离过程中防空洞现象的方法

摘要

isolation film of the present invention relates to a method for preventing dibot shape , more particularly STI (Shallow Trench Isolation ) active region edge portion is reduced in forming the pad oxide film density bar dibot shape is generated , by performing a tilt implant (Tilt Implant) the STI edge portion formed at an active region in order to prevent this, the pad oxide film , effectively prevents the formation and dibot reduce the process steps required in the STI process , after the STI process to suppress the mote that may take place in the washing step is in progress to improve the yield and integration of semiconductor devices .
机译:本发明的隔离膜涉及一种防止双机器人形状的方法,更具体地讲,通过进行倾斜注入(倾斜注入),在形成焊盘氧化物膜时,减少了STI(浅沟槽隔离)有源区边缘部分的密度,从而形成双机器人形状。 )为了防止焊盘氧化膜形成在有源区域上的STI边缘部分,有效地防止了形成并减少了STI工序中所需的工序,在STI工序之后抑制了可能发生的尘埃。正在进行清洗步骤,以提高半导体器件的产量和集成度。

著录项

  • 公开/公告号KR20060078440A

    专利类型

  • 公开/公告日2006-07-05

    原文格式PDF

  • 申请/专利权人 DONGBU ELECTRONICS CO. LTD.;

    申请/专利号KR20040118398

  • 发明设计人 KIM DUCK HWAN;

    申请日2004-12-31

  • 分类号H01L21/76;

  • 国家 KR

  • 入库时间 2022-08-21 21:25:18

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