首页> 外国专利> RFID DEVICE HAVING A MEMORY FOR CORRECTING A FAIL CELL AND METHOD FOR CORRECTING A FAIL CELL THEREOF

RFID DEVICE HAVING A MEMORY FOR CORRECTING A FAIL CELL AND METHOD FOR CORRECTING A FAIL CELL THEREOF

机译:具有用于校正故障单元的存储器的rfid设备及其用于校正故障单元的方法

摘要

An RFID device including a memory capable of correcting defective cell and a correction method thereof are provided to improve yield of the RFID device by correcting cell data distributed in the memory at random by comparing data of unit cells of each group. An analog block(20) transmits/receives data from an external communication device and analyzes the data. A digital block(30) receives and processes a power supply voltage and a signal for data transmission from the analog block, and transmits a response signal to the analog block and outputs a memory control signal. A memory(40) is controlled by the memory control signal and stores same data in each memory group in a write mode by separating a constant number of unit cells into one memory group and then judges same data as effective data by comparing cell data of the memory group selected in a read mode.
机译:提供一种包括能够校正缺陷单元的存储器的RFID设备及其校正方法,以通过比较每个组的单位单元的数据来随机地校正分布在存储器中的单元数据,从而提高RFID设备的产量。模拟块(20)从外部通信设备发送/接收数据并分析该数据。数字模块(30)从模拟模块接收并处理电源电压和用于数据传输的信号,并将响应信号发送至模拟模块并输出存储器控制信号。存储器(40)由存储器控制信号控制,并且通过将恒定数量的单位单元划分成一个存储器组而以写入模式将相同数据存储在每个存储器组中,然后通过比较存储器单元的单元数据来将相同数据判断为有效数据。在读取模式下选择的存储组。

著录项

  • 公开/公告号KR20060110742A

    专利类型

  • 公开/公告日2006-10-25

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20060008955

  • 发明设计人 KANG HEE BOK;AHN JIN HONG;

    申请日2006-01-27

  • 分类号G11C11/22;

  • 国家 KR

  • 入库时间 2022-08-21 21:24:44

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