Polymers, Chemical Amplification Resist Compositions and Patterning Process

摘要

The present invention relates to a polymer compound characterized in that it comprises a polystyrene derivative having a fluorinated backbone of the repeating units represented by the following formula (1). ; Formula 1 ; In the formulas, R ¹ is a hydrogen atom, a fluorine atom, or C 1 -C 20 straight, branched or cyclic alkyl group or fluorinated alkyl group of, ; R ² is a fluorine atom, or a straight, branched or cyclic alkyl group or fluorinated alkyl group having 1 to 20 carbon atoms, ; R ³ is an aryl group having 6 to 20 carbon atoms, and may also be a hydroxyl group which is substituted by hydroxyl group, and (or) group OR ⁴ (R ⁴ being the acid labile) bond. ; In addition, the resist composition of the invention is sensitive to high-energy radiation and has excellent sensitivity, resolution and plasma etch resistance at a wavelength of 170 nm or less, particularly less than 200 nm. Therefore, the resist composition of the invention may be absorb a small resist material at the exposure wavelength, particularly F ₂ excimer laser from these characteristics, microstructure and also can easily form a treat W perpendicular to the pattern on the substrate, and thus it is suitable as a fine pattern forming material of the second LSI manufacture. ; Photoresist, a photoresist material, a polystyrene derivative