首页> 外国专利> Reagent for measuring metals in wafer cleaning solution and apparatus and method for monitoring metal contaminants in wafer cleaing solution

Reagent for measuring metals in wafer cleaning solution and apparatus and method for monitoring metal contaminants in wafer cleaing solution

机译:用于测量晶片清洁溶液中的金属的试剂以及用于监测晶片切割溶液中的金属污染物的设备和方法

摘要

Monitoring metal contamination of a rinsing solution may include providing a sample of the rinsing solution, and mixing the sample of the rinsing solution with a monitoring reagent to provide a monitoring mixture. A property of the monitoring mixture that is dependent on a concentration of a metal in the rinsing solution may then be measured. More particularly, the property of the monitoring mixture may be an absorbency of the monitoring mixture with respect to electromagnetic radiation transmitted through the monitoring mixture. Related systems and reagents are also discussed.
机译:监测漂洗溶液的金属污染可包括提供漂洗溶液的样品,并将漂洗溶液的样品与监测试剂混合以提供监测混合物。然后可以测量监视混合物的性质,该性质取决于冲洗溶液中金属的浓度。更特别地,监测混合物的性质可以是监测混合物对通过监测混合物传输的电磁辐射的吸收性。还讨论了相关的系统和试剂。

著录项

  • 公开/公告号KR100585139B1

    专利类型

  • 公开/公告日2006-05-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040024897

  • 申请日2004-04-12

  • 分类号H01L21/302;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:42

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