METHOD FOR SURFACE MODIFICATION OF SILICON CARBIDE AND SILICON CARBIDE RESULTED THEREFROM

摘要

The invention of the silicon carbide used in such heat-resistant parts, wear-resistant parts and semiconductor manufacturing equipment components relates to a surface modification method and a surface-modified silicon carbide, and more particularly by the surface modification strength, shock resistance characteristics, so that the wear resistance of the surface modification process, and thereby the surface-modified silicon carbide of SiC improves the air will. ; SiC surface modification method of the present invention is ; in the air 900-1300 , preferably from several seconds to several tens of times the silicon carbide heat treatment at a temperature of 1050-1300 includes the steps: ; According to the silicon carbide surface modification method of the present invention, the silicon carbide having the strength, thermal shock properties, improve the wear resistance and has the effect of healing the cracks that occur during processing. ; In addition, such a surface modification method as well as to improve the physical properties of silicon carbide by a simple method, since it provides an advantageous manufacturing process cost, the heat-resistant silicon carbide components are used, the abrasion a major effect on the semiconductor manufacturing industry for parts and equipment parts is expected.