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programmable impedance Control circuit in semiconductor device and impedance range shifting method therefor

机译:半导体器件中的可编程阻抗控制电路及其阻抗范围转换方法

摘要

process, supply voltage, preventing the impedance detection failure due to fluctuations in the surrounding environment such as temperature or minimize to programmable impedance control circuit of the semiconductor device having the impedance Flange shifting function it is disclosed. Such a programmable impedance control circuit comprises: a first array drive in response to the control code data, Flange shifting the second drive in response to a data array, for each of the first and second impedance matching it is independently controlled by an array drive transistor and the impedance detector comprises an array Schiff and Flange tingyong transistor array; And a comparison unit for comparing each of the first and second output voltage level and the reference voltage of the impedance detector array and outputting the up-down signal as a comparison resu In response to the up-down signal and a counter for outputting a control code data to turn on or off the P-channel and the increase and decrease counted and Mohs yen channel transistor; By monitoring the output of the counter unit counting Flange Flange and a shift circuit which generates a shifting data. According to the invention, the manufacturing process, the power supply voltage, even if there are environmental changes, such as operating temperature, and the impedance matching for the transistor array of the advantage that the control code can perform the impedance matching and calibration operation without waste.
机译:公开了一种用于处理,供应电压的方法,以防止由于诸如温度之类的周围环境的波动而引起的阻抗检测失败,或者最小化具有阻抗凸缘移位功能的半导体器件的可编程阻抗控制电路。这样的可编程阻抗控制电路包括:响应于控制代码数据的第一阵列驱动器,响应于数据阵列而使第二驱动器法兰移动,对于匹配的第一和第二阻抗中的每一个,其均由阵列驱动晶体管独立地控制。所述阻抗检测器包括阵列席夫(Schiff)和法兰(Tlange)的丁永晶体管阵列。以及比较单元,用于比较第一和第二输出电压电平和阻抗检测器阵列的参考电压,并输出上下信号作为比较结果;响应于上下信号和计数器,用于输出控制码数据以导通或关断P沟道以及增加和减少的计数和Mohs日元沟道晶体管;通过监视计数法兰的计数器单元的输出法兰和产生移位数据的移位电路。根据本发明,即使在操作温度等环境变化的情况下,制造工艺,电源电压和晶体管阵列的阻抗匹配也具有控制代码无需进行阻抗匹配和校准即可的优点。浪费。

著录项

  • 公开/公告号KR100610007B1

    专利类型

  • 公开/公告日2006-08-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040043416

  • 发明设计人 이영대;최명한;박철성;

    申请日2004-06-14

  • 分类号H03K19/0175;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:16

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