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DIAMOND TOOLS, synthetic single crystal diamond, a method of synthesizing single crystal diamond and diamond jewelry
DIAMOND TOOLS, synthetic single crystal diamond, a method of synthesizing single crystal diamond and diamond jewelry
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机译:DIAMOND TOOLS,合成单晶钻石,一种合成单晶钻石和钻石珠宝的方法
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摘要
1. diamond tool manufactured with the use of u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e diamond, artificial u0441u0438u043du0442u0435u0437u0438u0440u043eu0432u0430u043du043du043eu0433u043e under high pressure temperature, method u0440u0430u0434u0438u0435u043du0442u0430, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 diamond is a crystal containing an admixture of at most 3 h / million, and the tool has a blade end to u043eu0442u043eu0440u043eu0433u043e is oriented in a plane u00a0u0432u043bu00a0u044eu0449u0435u0439u0441u00a0 plane (110).;2. diamond tool 1, in which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 crystal contains u0443u043fu043eu043cu00a0u043du0443u0442u0443u044e admixture of at most 0.1 h / million.;3. diamond tool u00a0u0432u043bu00a0u044eu0449u0438u0439u0441u00a0 1, one of the u0441u0432u0435u0440u0445u0432u044bu0441u043eu043au043eu0442u043eu0447u043du044bu0445 cutting tool u043cu0438u043au0440u043eu0442u043eu043cu043du043eu0433u043e knife, diamond blade, diamond tool u0434u043bu00a0 incisors, u043du0430u043du0435u0441u0435 u043du0438u00a0 lines and u0434u043bu00a0 tool sharpening.;4. diamond tool 1, in which u0434u043bu00a0 u043fu0440u0438u043au0440u0435u043fu043bu0435u043du0438u00a0 u0443u043fu043eu043cu00a0u043du0443u0442u043eu0433u043e diamond tool main body is used u0442u0438u0442u0430u043du043eu0441u043eu0434u0435u0440u0436u0430u0449u0438u0439 activated solder (22).;5.diamond tool manufactured with the use of u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e diamond, artificial u0441u0438u043du0442u0435u0437u0438u0440u043eu0432u0430u043du043du043eu0433u043e under high pressure temperature, method u0440u0430u0434u0438u0435u043du0442u0430, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 diamond is a crystal containing nitrogen of at most 3 h / million, and the tool has a blade, the end of which whom is oriented in a plane u00a0u0432u043bu00a0u044eu0449u0435u0439u0441u00a0 plane (110).and u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 crystal also contains nickel.;6. diamond tool on clause 5, in which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 nickel u0441u043eu0434u0435u0440u0436u0438u0442u0441u00a0 of at least 0.01 h / million and at most 10 / million.;7. diamond tool on clause 5, in which u0434u043bu00a0 u043fu0440u0438u043au0440u0435u043fu043bu0435u043du0438u00a0 u0443u043fu043eu043cu00a0u043du0443u0442u043eu0433u043e diamond tool main body is used u0442u0438u0442u0430u043du043eu0441u043eu0434u0435u0440u0436u0430u0449u0438u0439 activated solder (22).;8.diamond tool manufactured with the use of u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e diamond, artificial u0441u0438u043du0442u0435u0437u0438u0440u043eu0432u0430u043du043du043eu0433u043e under high pressure temperature, method u0440u0430u0434u0438u0435u043du0442u0430, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 diamond is a crystal containing nitrogen of at most 3 h / million, and the tool has a blade, the end of which whom is oriented in a plane u00a0u0432u043bu00a0u044eu0449u0435u0439u0441u00a0 plane (110).and u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 crystal also contains boron and nickel.;9. diamond tool on p.8, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 bohr u0441u043eu0434u0435u0440u0436u0438u0442u0441u00a0 of at least 0.01 h / million and at most 300 h / million.;10. diamond tool on p.8, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 nickel u0441u043eu0434u0435u0440u0436u0438u0442u0441u00a0 of at least 0.01 h / million and at most 10 / million.;11. diamond tool on p.8, which u0434u043bu00a0 u043fu0440u0438u043au0440u0435u043fu043bu0435u043du0438u00a0 u0443u043fu043eu043cu00a0u043du0443u0442u043eu0433u043e diamond tool main body is used u0442u0438u0442u0430u043du043eu0441u043eu0434u0435u0440u0436u0430u0449u0438u0439 activated solder (22).;12. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond, novo under very high pressure at a high temperature by the temperature gradient, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 at u043bu0438u0447u0438u0435u043c crystal containing nickel as a substitute of the atom.;13. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.12, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 nickel u0441u043eu0434u0435u0440u0436u0438u0442u0441u00a0 of at least 0.01 h / million and at most 10 / million.;14. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.12 containing nitrogen in the amount of at least 0.01 h / million and at most 3 h / million.;15. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.12 used u0434u043bu00a0 tool.;16. synthetic diamond on u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 p.15, which u0434u043bu00a0 u043fu0440u0438u043au0440u0435u043fu043bu0435u043du0438u00a0 synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e diamond to the angle part (23) u0443u043fu043eu043cu00a0u043du0443u0442u043eu0433u043e instrument the used u0442u0438u0442u0430u043du043eu0441u043eu0434u0435u0440u0436u0430u0449u0438u0439 activated solder (22).;17. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.12 used u0434u043bu00a0 jewelry u0438u0437u0434u0435u043bu0438u00a0.;18. diamond tool, diamond containing synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 on p.12.;19. diamond jewellery, diamond containing synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 on p.12.;20. method of synthesis of diamond u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e under very high pressure at a high temperature by the temperature gradient, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 of rast u0432u043eu0440u0438u0442u0435u043bu00a0, u0441u043eu0441u0442u043eu00a0u0449u0435u0433u043e from at least one of iron and cobalt, at least 36 u043du0438u043au0435u043bu00a0 mas.% of at least 1 mas.% and at most 2% of titanium and at mas. least 3 mas.% and at most 2 mas.% of graphite.;21. way on p.20, which u0437u0430u0442u0440u0430u0432u043eu0447u043du0430u00a0 fringe crystal - free (13) u00a0u0432u043bu00a0u0435u0442u0441u00a0 plane (100) crystal diamond.;22. way on p.20, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond synthesizing a in 138025C.;23. way on p.20, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 on diamond synthesizing a speed at least 3.9 mg / hour or more of 4.7 mg / hr.;24. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond, novo under very high pressure at a high temperature by the temperature gradient, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 at u043bu0438u0447u0438u0435u043c crystal containing boron and nickel as a replacement of atoms.;25. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.24, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 bohr u0441u043eu0434u0435u0440u0436u0438u0442u0441u00a0 of at least 1 h / million and at most 300 h / million.;26. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.24, which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 nickel u0441u043eu0434u0435u0440u0436u0438u0442u0441u00a0 of at least 0.01 h / million and at most 10 / million.;27. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.24 containing nitrogen of at most 3 h / million.;28. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.24 used u0434u043bu00a0 tool.;29. synthetic diamond on u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 p.28, which u0434u043bu00a0 u043fu0440u0438u043au0440u0435u043fu043bu0435u043du0438u00a0 synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e diamond to the angle part (23) u0443u043fu043eu043cu00a0u043du0443u0442u043eu0433u043e instrument the used u0442u0438u0442u0430u043du043eu0441u043eu0434u0435u0440u0436u0430u0449u0438u0439 activated solder (22).;30. synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond on p.24 used u0434u043bu00a0 jewelry u0438u0437u0434u0435u043bu0438u00a0.;31. diamond tool, diamond containing synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 on p.24.;32. diamond jewellery, diamond containing synthetic u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 on p.24.;33. method of synthesis of diamond u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e under very high pressure at a high temperature by the temperature gradient, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 of rast u0432u043eu0440u0438u0442u0435u043bu00a0, u0441u043eu0441u0442u043eu00a0u0449u0435u0433u043e from at least one of iron and cobalt, at least 36 u043du0438u043au0435u043bu00a0 mas.% of at least 1 mas.% and at most 2 mas.% of titanium, at m u0435u0440u0435 0.1 mas.% and at most 0.2 mas.% of boron, and at least 3 mas.% and at most 2 mas.% of graphite.;34. method for p.33, which u0437u0430u0442u0440u0430u0432u043eu0447u043du0430u00a0 fringe crystal - free (13) u00a0u0432u043bu00a0u0435u0442u0441u00a0 plane (100) crystal diamond.;35. method for u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 p.33, which u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 diamond synthesizing a in 135030C.;36. the way in which u0443u043fu043eu043cu00a0u043du0443u0442u044bu0439 u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0439 p.33, in synthesizing a diamond with a speed of at least 3.1 mg / h and for the most part 3.8 mg / hr.
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