3He/4He of 10-5 degree is determined, presence of high electric conductivity is determined at semiconductor level, locality and intensiveness of magnetic anomalies, anomalies of gravity force field, and depth of position of silicides is determined by magnetic-telluric probing and/or seismic methods of reflected and refracted waves.;EFFECT: increased trustworthiness of received information.;6 cl, 4 dwg"/>
METHOD FOR DETECTING POSITION AREA OF 'TONGUE' OF MANTLE SUBSTANCE DIAPIR
FIELD: geophysics, possible utilization during underground extraction of ores, in particular, metal-containing deposits.;SUBSTANCE: method for detecting position area of "tongue" of mantle substance diapir includes performing geological observation in zones of rift creation, supported by diapirs of abnormal mantle, and by presence of silicides, presence of which is determined by presence of influence trails of silane streams on rocks and/or trails of explosions of silanes, place of positioning of "tongue" of mantle substance diapir in earth crust is determined. For determining silicides at low depth as physical parameters for determining position of "tongue" of diapir of aforementioned mantle substance in earth crust, isotopic ration 3He/4He of 10-5 degree is determined, presence of high electric conductivity is determined at semiconductor level, locality and intensiveness of magnetic anomalies, anomalies of gravity force field, and depth of position of silicides is determined by magnetic-telluric probing and/or seismic methods of reflected and refracted waves.;EFFECT: increased trustworthiness of received information.;6 cl, 4 dwg
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